Tregub, A.; Rawat, A. (Intel Corporation, Technology Manufacturing Group, 2200 Mission College Blvd, Santa Clara, CA 95054)
Chemical Mechanical Planarization (CMP) has become a method of choice for planarization of metal and oxide layers in microelectronics industry. CMP is a complex chemical and mechanical process that depends heavily on multiple consumable properties and process parameters, in particularly, on the properties of CMP slurries, pads and conditioning disks. This paper describes current gaps in CMP consumable metrologies and explains approaches to the gaps closure.