Evaluating NBTI in Synthesized Operational Amplifiers using an Accurate Ageing Model
Conference: ANALOG 2013 - Entwicklung von Analogschaltungen mit CAE-Methoden - Vorträge der 13. ITG/GMM-Fachtagung
03/04/2013 - 03/06/2013 at Aachen, Deutschland
Proceedings: ANALOG 2013 - Entwicklung von Analogschaltungen mit CAE-Methoden
Pages: 6Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Salfelder, Felix; Hedrich, Lars; Meissner, Markus (Electronic Design Methodology, Department of Computer Science, Goethe University Frankfurt, Germany)
In this paper we present a method to model and simulate continuous transistor ageing effects in the generic case. The ageing model genuinely supports nominal parameter degradation and recovery during analog operation, including the HCI- and BTI-effect in transistors. It can be effectively fitted to reproduce previously measured or simulated ageing data. Ageing simulation at analogue transistor circuit level is carried out in a two-time loop. This way we make sure that stress signals do reflect the actual state of the circuit, and the state of the ageing model is computed accordingly. As examples we have prepared a set of synthesized operational amplifiers with different topologies. We observe varying drifts not only between mutually different instances, but also under different modes of operation.