An Improved Method of Controlling IGBT Modules Using an Optimized Gate Current Waveform
Conference: CIPS 2014 - 8th International Conference on Integrated Power Electronics Systems
02/25/2014 - 02/27/2014 at Nuremberg, Germany
Proceedings: ETG-Fb. 141: CIPS 2014
Pages: 6Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Cenusa, Marius; Cretu, Gabriel; Pfost, Martin (Robert Bosch Center for Power Electronics, Reutlingen University, Alteburgstr. 150, 72762 Reutlingen, Germany)
IGBT modules with anti-parallel FWDs are widely used in inductive load switching power applications, such as motor drive applications. Nowadays there is a continuous effort to increase the efficiency of such systems by decreasing their switching losses. This paper addresses the problems arising in the turn-on process of an IGBT working in hard-switching conditions. A method is proposed which achieves – contrary to most other approaches – a high switching speed and, at the same time, a low peak reverse-recovery current. This is done by applying an improved gate current waveform that is briefly lowered during the turn-on process. The proposed method achieves low switching losses. Its effectiveness is demonstrated by experimental results with IGBT modules for 600V and 1200V.