Evolution of Electrical Performance in New Generation of SiC MOSFET for High Temperature Applications

Conference: CIPS 2014 - 8th International Conference on Integrated Power Electronics Systems
02/25/2014 - 02/27/2014 at Nuremberg, Germany

Proceedings: ETG-Fb. 141: CIPS 2014

Pages: 5Language: englishTyp: PDF

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Authors:
Ouaida, Rémy (Laboratoire Ampère UMR CNRS 5005 FRANCE, Universite de Lyon - INSA de Lyon, 21 avenue Jean Capelle, 69621 Villeurbanne CEDEX, France __ THALES Microelectronics FRANCE, CAP BRETAGNE - Z.A. Le Piquet, 35370 ETRELLES, France)
Calvez, Cyril; Podlejski, Anne-Sophie; Brosselard, Pierre (Laboratoire Ampère UMR CNRS 5005 FRANCE, Universite de Lyon - INSA de Lyon, 21 avenue Jean Capelle, 69621 Villeurbanne CEDEX, France)
Ouaida, Rémy (THALES Microelectronics FRANCE, CAP BRETAGNE - Z.A. Le Piquet, 35370 ETRELLES, France)

Abstract:
This paper presents the evolution of electrical performance between the first and the second generation of SiC MOSFET for high temperature applications. A complete process to characterize the device at high temperature has been established and two generations of SiC MOSFET have been compared. The static characteristics and switching performances have been tested under varying temperature from 25 °C to 250 °C. The result allows us to conclude on the possibility to use SiC MOSFET devices in high temperature applications.