Power cycling capability of Modules with SiC-Diodes
Conference: CIPS 2014 - 8th International Conference on Integrated Power Electronics Systems
02/25/2014 - 02/27/2014 at Nuremberg, Germany
Proceedings: ETG-Fb. 141: CIPS 2014
Pages: 6Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Herold, Ch.; Poller, T.; Lutz, J. (Chemnitz University of Technology, Chemnitz, Germany)
Schaefer, M.; Sauerland, F.; Schilling, O. (Infineon Technologies AG, Warstein, Germany)
This paper discusses the power cycling capability of diodes made of silicon-carbide in comparison with that of devices made of silicon under the same testing conditions as measured by conventional parameters like junction temperature swing DeltaTj and maximum junction temperature Tjmax. In power cycling tests the reliability of standard soldered SiC-chips is about three to four times lower than found on silicon devices of the similar rated current and voltage class. The mechanism of aging is well understood and improved chip and interconnect technologies show promising results in terms of enhanced cycling capability.