Losses Comparison of Gallium Nitride and Silicon Transistors in a High Frequency Boost Converter
Conference: CIPS 2014 - 8th International Conference on Integrated Power Electronics Systems
02/25/2014 - 02/27/2014 at Nuremberg, Germany
Proceedings: ETG-Fb. 141: CIPS 2014
Pages: 6Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Wang, Wenbo; Pansier, Frans; Haan, S. W. H. de; Ferreira, J. A. (Delft University of Technology, The Netherlands)
Comparisons of losses are made between a Gallium Nitride High Electron Mobility Transistor (GaN HEMT) rated for 200V and a 200V Si MOSFET with the lowest loss under specified conditions. The comparisons are carried out on a boost converter in three different operating modes: Continuous Conduction Mode (CCM), Boundary Conduction Mode (BCM) and Boundary Conduction Mode with Valley Switching (BCM-VS). The converter is operated at 1MHz switching frequency with 100W load. It is shown that GaN devices outperform Si devices only in BCM-VS mode, while Si devices perform better in CCM and BCM modes of operation.