Electro – Thermal Simulations and Experimental Results on the Surge – Current Capability of 1200 V SiC MPS Diodes

Conference: CIPS 2014 - 8th International Conference on Integrated Power Electronics Systems
02/25/2014 - 02/27/2014 at Nuremberg, Germany

Proceedings: ETG-Fb. 141: CIPS 2014

Pages: 6Language: englishTyp: PDF

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Authors:
Fichtner, Susanne; Lutz, Josef; Basler, Thomas (Chemnitz University of Technology, Chemnitz, Germany)
Rupp, Roland; Gerlach, Rolf (Infineon Technologies AG, Neubiberg, Germany)

Abstract:
In this paper the surge current capability of 1200 V silicon carbide mergedpinSchottky (MPS) diodes is discussed. Measurements show a distinctive behavior with a voltage decrease on the onset of the pregions. Experimental results are compared to electrothermal simulations. The influence of the substrate thickness and the anode metallization thickness and material is investigated. It was found that the device benefits from an increased anode metallization thickness and copper as material, however, mostly from a reduced substrate thickness.