DCB-based low-inductive SiC modules for high frequency operation
Conference: CIPS 2014 - 8th International Conference on Integrated Power Electronics Systems
02/25/2014 - 02/27/2014 at Nuremberg, Germany
Proceedings: ETG-Fb. 141: CIPS 2014
Pages: 10Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Meisser, Michael (Light Technology Institute, Karlsruhe Institute of Technology (KIT), Karlsruhe, Germany)
Hamilton, Dean; Mawby, Philip (Peater Lab, School of Engineering, Warwick University, Coventry, United Kingdom)
The work at hand encompasses the design, manufacture and electrical characterisation of full-SiC modules optimised for high frequency operation. The parasitic inductances of the module were minimised by abandonment of contact leads while the use of AlN DCB substrates ensures an excellent heat transfer to the heat-sink. The low parasitic inductances of the modules were verified by impedance spectroscopy. Modules were equipped with SiC MOSFETs and SiC JFETs. Both were compared regarding their static losses and switching behaviour by means of temperature-controlled test rigs. Key parameters as voltage rise and fall times, switching losses and on-resistances were measured. The MOSFET-equipped modules offer fast switching with 50 kV/µs at 20 A, 800 V.