Present and Future of GaN Power Devices

Conference: CIPS 2014 - 8th International Conference on Integrated Power Electronics Systems
02/25/2014 - 02/27/2014 at Nuremberg, Germany

Proceedings: ETG-Fb. 141: CIPS 2014

Pages: 5Language: englishTyp: PDF

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Ueda, Daisuke; Fukuda, Takeshi; Nagai, Shuichi; Sakai, Hiroyuki; Otsuka, Nobuyuki (Advanced Technology Research Laboratories, Panasonic, Japan)
Morita, Tatsuo; Negoro, Noboru; Ueda, Tetsuzo; Tanaka, Tsuyoshi (Industrial Devices Company, Panasonic, Japan)

This paper reviews the present status of GaN-based power devices which has started the practical applications. Normally-off characteristics were realized by introducing p-type AlGaN gate structure, where holes are injected into the channel reducing the on-resistance by conductivity modulation. Experimentally fabricated GaN GIT inverter system attained the world-highest conversion efficiency over 99.3% by using bilateral structure. AlGaN/GaN Natural Super Junction was also developed to overcome the trade-off between the blocking voltage and the on-resistance. Further, a fusion of microwave and power devices was developed as Drive-by-Microwave technology. Finally, direct liquid-immersion package technology, where GaN chip are mounted inside the heat-pipe, was demonstrated. The technology contributes to the dramatic reduction of junction temperature, which had been a problem caused by the increased power density of GaN devices.