Present and Future of GaN Power Devices
Conference: CIPS 2014 - 8th International Conference on Integrated Power Electronics Systems
02/25/2014 - 02/27/2014 at Nuremberg, Germany
Proceedings: ETG-Fb. 141: CIPS 2014
Pages: 5Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Ueda, Daisuke; Fukuda, Takeshi; Nagai, Shuichi; Sakai, Hiroyuki; Otsuka, Nobuyuki (Advanced Technology Research Laboratories, Panasonic, Japan)
Morita, Tatsuo; Negoro, Noboru; Ueda, Tetsuzo; Tanaka, Tsuyoshi (Industrial Devices Company, Panasonic, Japan)
This paper reviews the present status of GaN-based power devices which has started the practical applications. Normally-off characteristics were realized by introducing p-type AlGaN gate structure, where holes are injected into the channel reducing the on-resistance by conductivity modulation. Experimentally fabricated GaN GIT inverter system attained the world-highest conversion efficiency over 99.3% by using bilateral structure. AlGaN/GaN Natural Super Junction was also developed to overcome the trade-off between the blocking voltage and the on-resistance. Further, a fusion of microwave and power devices was developed as Drive-by-Microwave technology. Finally, direct liquid-immersion package technology, where GaN chip are mounted inside the heat-pipe, was demonstrated. The technology contributes to the dramatic reduction of junction temperature, which had been a problem caused by the increased power density of GaN devices.