Sputter deposition of piezoelectric AlN and AlScN films for ultrasonic and energy harvesting applications

Conference: Energieautarke Sensorik - Beiträge des 7. GMM-Workshops
02/24/2014 - 02/25/2014 at Magdeburg, Deutschland

Proceedings: Energieautarke Sensorik

Pages: 5Language: englishTyp: PDF

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Barth, S.; Gloess, D.; Bartzsch, H.; Frach, P. (Fraunhofer FEP, Winterbergstraße 28, 01277 Dresden, Germany)
Herzog, T.; Walter, S.; Heuer, H. (Fraunhofer IKTS-MD, Maria-Reiche-Str. 2, 01109 Dresden, Germany)
Suchaneck, G.; Gerlach, G. (Technical University Dresden, 01062 Dresden, Germany)
Juuti, J.; Palosaari, J. (University of Oulu Linnamaa, 90570 Oulu, Finland)

This paper reports on the deposition and characterization of highly piezoelectric aluminium nitride (AlN) and aluminium scandium nitride (AlXSc1-XN) thin films. Characterization methods include XRD, SEM, pulse echo and piezoemeter measurements. The deposition of highly piezoelectric AlN films was achieved with deposition rates up to 200 nm/min on a coating diameter of 200 mm. Additionally, the energy harvesting properties of AlN due to ambient mechanical vibrations are demonstrated with a basic cantilever structure of Si with AlN on top. This basic and not optimized design showed a power generation ability of several 10 muW to several 100 muW for an excitation vibration with displacement amplitudes from 2.5 µm to 7.5 µm peak-to-peak and frequencies of around 600 Hz.