Bias-Dependent Pospieszalski Noise Model for GaN HEMT Devices
Conference: GeMiC 2014 - German Microwave Conference
03/10/2014 - 03/12/2014 at Aachen, Germany
Proceedings: ITG-Fb. 246: GeMiC 2014
Pages: 4Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Rudolph, Matthias (Brandenburg University of Technology Cottbus, Siemens-Halske-Ring 14, 03046 Cottbus, Germany)
Rudolph, Matthias; Doerner, Ralf (Ferdinand-Braun-Institut, Leibniz-Institut für Hoechstfrequenztechnik (FBH), Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany)
This paper proposes a new bias-dependent description for the Pospieszalski noise model for GaN HEMT devices. It is also proposed to replace the traditional description of the drain noise temperature by a general noise power which is linked to the drain current. A well-behaved bias dependence of the new parameter is found and we were able to show that the new approach reduces uncertainty in the nonlinear noise model.