Analysis of Tilting Load-Lines in AlGaN/GaN Broadband Uniform Distributed Amplifiers
Conference: GeMiC 2014 - German Microwave Conference
03/10/2014 - 03/12/2014 at Aachen, Germany
Proceedings: ITG-Fb. 246: GeMiC 2014
Pages: 4Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Coers, Malte; Boesch, Wolfgang (Graz University of Technology, Germany)
This paper presents a general analysis of tilting load-lines in uniform distributed power amplifiers (UDPA). By means of an ideal equivalent circuit, the dependency of the loadline behavior of the first transistor on design parameters is examined. A DC-15 GHz UDPA designed in a 0.25 µm Al-GaN/GaN technology is employed to verify the undertaken theoretical analysis by large-signal simulation and thermal IRimaging results. The theoretical analysis shows that the two most effective remedies are transistor tapering and drain-line tapering to maintain the first transistor in the safe operating region. Nevertheless, in the presented AlGaN/GaN UDPA design power absorption by the first transistor at certain frequencies could not be suppressed by drain-line tapering due to design specific constraints.