Room Temperature Terahertz Detection by Rectifying Field Effect Transistors
Conference: GeMiC 2014 - German Microwave Conference
03/10/2014 - 03/12/2014 at Aachen, Germany
Proceedings: ITG-Fb. 246: GeMiC 2014
Pages: 3Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Preu, Sascha; Regensburger, Stefan (Chair for Applied Physics, FAU Erlangen-Nuremberg, Erlangen, Germany)
Lu, Hong; Gossard, A. C. (Materials Dept., University of California, Santa Barbara, Santa Barbara, CA, USA)
Rectifying field effect transistors have become versatile Terahertz detectors. We will discuss the detection mechanism. The state of the art in rectifying field effect transistors will be reviewed, showing that this novel detector concept is already comparable to well developed Schottky diode technology. The paper will discuss advantages and disadvantages of III-V materials vs. Si-based transistors. We report on ultrafast direct detection with large area GaAs-based field effect transistors at room temperature.