Fully Differential 40 GHz Amplifier for LO Distribution circuitry in 90 nm CMOS Technology

Conference: GeMiC 2014 - German Microwave Conference
03/10/2014 - 03/12/2014 at Aachen, Germany

Proceedings: ITG-Fb. 246: GeMiC 2014

Pages: 4Language: englishTyp: PDF

Personal VDE Members are entitled to a 10% discount on this title

Authors:
Malignaggi, Andrea; Hamidian, Amin; Boeck, Georg (Microwave Engineering Lab, Berlin Institute of Technology, Berlin, Germany)
Boeck, Georg (Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik (FBH), Berlin, Germany)

Abstract:
A fully differential 40 GHz amplifier in 90 nm CMOS technology thought to be used in a LO distribution network is presented and discussed in this paper. The amplifier, consisting in a 2-stages cascode amplifier, reaches 14.4 dB small signal gain and 7 dBm saturated output power consuming only 63 mW. The occupied area is 0,47 mm2 pad included. The detailed design procedure and the on-wafer measurement process are presented in this paper.