2.45 GHz ISM-Band RF-PA Demonstrator for GaN-HEMT optimization
Conference: GeMiC 2014 - German Microwave Conference
03/10/2014 - 03/12/2014 at Aachen, Germany
Proceedings: ITG-Fb. 246: GeMiC 2014
Pages: 4Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Platz, Fabian; Bengtsson, Olof; Raemer, Adam; Chevtchenko, Serguei A.; Heinrich, Wolfgang (Ferdinand-Braun-Institut (FBH), Leibniz Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany)
In this work empirical results of an investigation aimed at improving GaN-HEMTs for higher frequency operation are presented. Two GaN-HEMT versions with nominal 60W output power and different gate-drain distances (LGD) are inves- tigated using load-pull measurements and in a fabricated power amplifier (PA) demonstrator for the ISM band at 2.45 GHz. The load-pull investigation shows that the optimum impedances in the 2.0. . .3.5 GHz range are very similar for both types of transistors. At 2.45GHz the shorter LGD transistor provides up to 0.7 dB improved output power (POUT ) with 4% improved maximum power added efficiency (PAE). In the PA demonstrator the load- pull results are verified. The transistors show similar frequency response but in general >0.5 dB more saturated output power resulting in a 5 - 10% points improvement in PAE for the shorter LGD transistor.