RF Oscillators based on Piezoelectric Aluminium Nitride MEMS Resonators

Conference: GeMiC 2014 - German Microwave Conference
03/10/2014 - 03/12/2014 at Aachen, Germany

Proceedings: ITG-Fb. 246: GeMiC 2014

Pages: 4Language: englishTyp: PDF

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Podoskin, D.; Shaukat, N.; Brueckner, K.; Blau, K.; Mehner, H.; Gropp, S.; Hoffmann, M.; Hein, M. A. (Ilmenau University of Technology, Institute of Micro- and Nanotechnologies IMN MacroNano®, P.O. Box 100565, 98684 Ilmenau, Germany)

In this paper, piezoelectric aluminium nitride (AlN) MEMS resonators potentially suitable for integrated RF oscillator circuits are studied. The fabrication process yields low-stress AlN layers with strong piezoelectric coupling due to an additional AlN nucleation layer. Electrical RF measurements show quality factors up to 1200 at resonant frequencies up to 400 MHz. For proof-of-concept, a discrete oscillator circuit was designed and successfully manufactured and experimentally characterized.