Sputter deposition of dielectric films for high temperature sensor applications
Conference: Sensoren und Messsysteme 2014 - Beiträge der 17. ITG/GMA-Fachtagung
06/03/2014 - 06/04/2014 at Nürnberg, Deutschland
Proceedings: Sensoren und Messsysteme 2014
Pages: 4Language: englishTyp: PDF
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Authors:
Bartzsch, Hagen; Frach, Peter; Gloess, Daniel; Barth, Stephan (Abteilung Praezisionsbeschichtung, Fraunhofer FEP, Winterbergstr. 28, 01277 Dresden, Germany)
Abstract:
High temperature stable insulating and active layers are required for pressure, flow and ultrasonic sensors, microfluidics and micro energy harvesting. A high rate sputter process for deposition of Al2O3, SiO2 and Si3N4 is presented. Films exhibit breakdown voltages of up to 1000V at temperatures up to 800deg C. AlN and AlScN films exhibit a pronounced caxis orientation of crystalline structure and a piezoelectric coefficient d33 of up to 30 pm/V.