A Parametric Layout Study of Radiated Emission from High-Frequency Half-Bridge Switching Cells
Conference: CIPS 2016 - 9th International Conference on Integrated Power Electronics Systems
03/08/2016 - 03/10/2016 at Nürnberg, Deutschland
Proceedings: CIPS 2016
Pages: 6Language: englishTyp: PDF
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Authors:
Seliger, Norbert; Stubenrauch, Franz (Hochschule Rosenheim, 83024 Rosenheim, Germany)
Schmitt-Landsiedel, Doris (Technische Universität München, 80333 München, Germany)
Abstract:
We present a numerical modeling study of radiated emission from half-bridge switching cells based on the method of moments (MoM). A low loop inductance cell design enables high-speed switching of power semiconductors which is demonstrated on a prototype circuit. The layout is further optimized for low radiated emission by variation of the heat sink placement. This is achieved by the heat sink attached to the phase terminal. The performance of the structure in terms of loop impedance, electric field radiation and sensitivity to cable attachments are numerically studied. Emission peaks arising from loop resonances can be reduced by over 20 dB with damping elements in the switching cell. The improved EMI performance of the proposed structure is attributed to decoupling of the loop current from the heat sink structure.