Optimal double sided gate control of IGBT for lower turn-off loss and surge voltage suppression
Conference: CIPS 2016 - 9th International Conference on Integrated Power Electronics Systems
03/08/2016 - 03/10/2016 at Nürnberg, Deutschland
Proceedings: CIPS 2016
Pages: 5Language: englishTyp: PDF
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Authors:
Harada, S.; Tsukuda, M.; Omura, I. (Kyushu Institute of Technology, 1-1 Sensui-cho, Tobata-ku, Kitakyushu, JAPAN)
Tsukuda, M. (City of Kitakyushu, 1-8 Hibikino, Wakamatsu-ku, Kitakyushu, JAPAN)
Abstract:
The current density of power semiconductor devices continues to increase and, carrier injection has been enhanced by several methods even though turn-off loss tends to be increased. In order to address this problem, we propose a double sided gate IGBT and optimal gate control method for lower turn-off loss. TCAD simulation numerically shows that the proposed IGBT successfully decreases turn-off loss. Furthermore, the turn-off loss is further decreased with optimal control of the double sided gate without surge voltage increase. In addition, we consider the effects of stray inductance on the performance of double sided gate IGBT.