Switching performance of GaN-HEMT compared to Si-devices in new converters based on scalable converter cell structures
Conference: CIPS 2016 - 9th International Conference on Integrated Power Electronics Systems
03/08/2016 - 03/10/2016 at Nürnberg, Deutschland
Proceedings: CIPS 2016
Pages: 5Language: englishTyp: PDF
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Authors:
Kapaun, Florian; Rolff, Christian; Marquardt, Rainer (Institute for Power Electronics and Control, Universität der Bundeswehr München, Germany)
Abstract:
New modular converter topologies (MMC, MHF), will enable the use of lower voltage semiconductors where the applications are covered by Si-IGBTs, up to now. Especially, in the voltage class up to 650 volts, unipolar devices, based on silicon or GaN offer great potential for future progress. Converters based on switching cells and multilayer boards become attractive, because a high level of integration and ultra-low loss can be achieved. According to these trends, a converter design with focus on scalability, low stray inductance, integrated gate drive and integrated DC-link is presented. Measurement results with GaN-HEMT compared to high speed Si-IGBT with SiC-diode are explained.