Towards Highly Integrated, Automotive Power SoCs Using Capacitors Operating at 100 V implemented in TSV
Conference: CIPS 2016 - 9th International Conference on Integrated Power Electronics Systems
03/08/2016 - 03/10/2016 at Nürnberg, Deutschland
Proceedings: CIPS 2016
Pages: 4Language: englishTyp: PDF
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Authors:
Gruenler, S.; Rattmann, G.; Erlbacher, T.; Bauer, A. J. (Devices and Reliability, Fraunhofer IISB, Erlangen, Germany)
Krach, F.; Frey, L. (Chair of Electron Devices, FAU-Erlangen-Nuremberg, Erlangen, Germany)
Abstract:
In this work, we report on the implementation of 3D silicon capacitors for the use in 50–100 V automotive applications as capacitive DC-DC converters operating in the MHz range. The fabrication process of the capacitors is based on the through-silicon-via technology and can be integrated into smart-power ICs and silicon interposers towards highly integrated power system-on-a-chip in the frame of an automotive qualified 350 nm Si-technology. High reliabilities and breakdown voltages up to 290 V (16 MV/cm) were achieved for present capacitors with a confined hole-patterns design. An integration density of 1.8 nF/mm2 was demonstrated for this approach. In addition, a detrimental wafer bow due to the mechanical stress of the thick dielectric layers can be considerably reduced by optimizing the design of the hole-patterns.