Organic Field-Effect and Nanoparticle Thin-Film Transistors: Static Model

Abstract:
Due to the complex nature of the device physics in Nanoparticle Thin-Film Transistors (N-TFTs) and Organic Field-Effect Transistors (O-FETs), comprehensive device models for circuit simulation are not available. Traditional silicon transistor models are not suitable for these types of technology, in spite of Nanoparticle-TFTs and organic-FETs follow the same working principle. Anyhow, the introduction of new models appears to be beneficial, but parameter extraction and fitting tends to be challenging. In this paper, a mathematical DC model for organic-FETs and Nanoparticle-TFTs is presented, which is tested for both types of technology. Unlike other models, the used equations do not try to model physical phenomena such as hysteresis and field-effect mobility since they appear to be arbitrary and unpredictable. From a circuit design perspective, the main advantage of this model is its simplicity in combination with a very good fit to the current-voltage transfer characteristics.