Record-high Modulation-efficiency Depletion-type Si-based Optical Modulator with In-situ B Doped Strained SiGe Layer on Si Waveguide for 1.3 um Wavelength
Conference: ECOC 2016 - 42nd European Conference on Optical Communication
09/18/2016 - 09/22/2016 at Düsseldorf, Deutschland
Proceedings: ECOC 2016
Pages: 3Language: englishTyp: PDF
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Authors:
Fujikata, J.; Noguchi, M.; Takahashi, S.; Nakamura, T. (Photonics Electronics Technology Research Association (PETRA), Tsukuba, Ibaraki 305-8569, Japan)
Han, J.; Takenaka, M. (The University of Tokyo, Bunkyo-ku, Tokyo, 113-8656, Japan)
Abstract:
We develop depletion-type Si optical modulator with strained SiGe on lateral Si pn junction. Owing to in-situ B doping for SiGe, we achieve high modulation efficiency of 0.6-0.67 Vcm at 1.3 µm wavelength with clear eye opeing at 28 Gbps.