Transmission Characteristics of 32-Gbaud PDM IQ Monolithic Silicon Modulator Operating with 2-VPPD Drive Voltage
Conference: ECOC 2016 - 42nd European Conference on Optical Communication
09/18/2016 - 09/22/2016 at Düsseldorf, Deutschland
Proceedings: ECOC 2016
Pages: 3Language: englishTyp: PDF
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Authors:
Ishikura, Norihiro; Goi, Kazuhiro; Zhu, Haike; Illarionov, Mikhail; Ishihara, Hiroki; Oka, Akira; Oda, Takuya; Masuko, Koichiro; Ori, Teijiro; Ogawa, Kensuke (Advanced Technology Laboratory, Fujikura Ltd., 1440 Mutsuzaki, Sakura, Chiba 285-8550, Japan)
Yoshida, Yuki (National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795, Japan)
Kitayama, Ken-ichi (Graduate School for the Creation of New Photonics Industries, 1955-1 Kurematsu-cho, Nishiku, Hamamatsu, Shizuoka 431-1202, Japan)
Liow, Tsung-Yang; Tu, Xiaoguang; Lo, Guo-Qiang; Kwong, Dim-Lee (Institute of Microelectronics, 11 Science Park Load, Singapore Science Park II, Singapore 117685, Singapore)
Abstract:
Monolithic silicon PDM IQ modulator having vertical PN-junction rib-waveguide phase shifters in a ceramic-based metal package operating with RF drive voltage as low as 2 VPPD is characterized in 32-Gbaud optical-fibre transmission. Signal-to-noise ratio penalty is obtained as 5.5 dB.