Post-CMOS integrated ALD 3D micro- and nanostructures and application for multi-electrode arrays
Conference: Mikro-Nano-Integration - 6. GMM-Workshop
10/05/2016 - 10/06/2016 at Duisburg, Deutschland
Proceedings: Mikro-Nano-Integration
Pages: 4Language: englishTyp: PDF
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Authors:
Jupe, A.; Figge, M.; Goehlich, A.; Vogt, H. (Fraunhofer Institute for Microelectronic Circuits and Systems, Finkenstr. 61, 47057 Duisburg, Germany)
Abstract:
The Fraunhofer IMS has developed a new Post-CMOS process based on DRIE and ALD technique, which can be used for the production of 3D micro- and nanostructures. As an example of this technology multi-electrode arrays (MEAs) with integrated ruthenium nano-lawn are presented for biomedical applications.