ECOC 2016 – Post Deadline Paper
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1.3-μm Directly Modulated Membrane Laser Array Employing Epitaxial Growth of InGaAlAs MQW on InP/SiO2/Si Substrate

Conference: ECOC 2016 – Post Deadline Paper - 42nd European Conference on Optical Communication
09/18/2016 - 09/22/2016 at Düsseldorf, Deutschland

Proceedings: ECOC 2016 – Post Deadline Paper

Pages: 3Language: englishTyp: PDF

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Authors:
Fujii, Takuro; Nishi, Hidetaka; Takeda, Koji; Hasebe, Koichi; Kakitsuka, Takaaki; Fukuda, Hiroshi; Tsuchizawa, Tai; Matsuo, Shinji (NTT Device Technology Labs., NTT Corporation, Japan & NTT Nanophotonics Center, NTT Corporation, Japan)
Kanno, Erina; Yamamoto, Tsuyoshi (NTT Device Technology Labs., NTT Corporation, Japan)

Abstract:
We have developed the first 1.3-µm directly modulated membrane laser array on Si. An InGaAlAs active layer with residual tensile strain is successfully grown on an InP/SiO2/Si substrate. 8-channel, 25.8-Gbit/s modulation is demonstrated with an energy cost of ~200 fJ/bit.