Recent Achievements and Future Development Trends of High Voltage Si-based Devices

Conference: Bauelemente der Leistungselektronik und ihre Anwendungen 2017 - 7. ETG-Fachtagung
04/06/2017 - 04/07/2017 at Bad Nauheim, Deutschland

Proceedings: ETG-Fb. 152: Bauelemente der Leistungselektronik und ihre Anwendungen 2017

Pages: 10Language: englishTyp: PDF

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Authors:
Kopta, Arnost (ABB Switzerland Ltd, Semiconductors, Lenzburg, Switzerland)

Abstract:
This paper gives an overview of the latest achievements in the area of Si-based turn-off devices for high voltage applications in the power range beyond 10MW. Today, two device technologies are available in this power range depending on the application demands: The Integrated Gate Commutated Thyristor (IGCT) and the Insulated Gate Bipolar Transistor (IGBT). In this paper, we will show the latest development trends of these two devices, including some relevant packaging results.