InP-based narrow-linewidth widely tunable quantum dot laser device for high-capacity coherent optical communication

Conference: Photonische Netze - 18. ITG-Fachtagung
05/11/2017 - 05/12/2017 at Leipzig, Deutschland

Proceedings: Photonische Netze

Pages: 3Language: englishTyp: PDF

Personal VDE Members are entitled to a 10% discount on this title

Authors:
Becker, Annette; Sichkovskyi, Vitalii; Rippien, Anna; Schnabel, Florian; Kaiser, Marcel; Reithmaier, Johann Peter (Technische Physik, Institute of Nanostructure Technologies and Analytics, Center of Interdisciplinary Nanostructure Science and Technology (CINSaT), University of Kassel, Heinrich-Plett-Str. 40, 34132 Kassel, Germany)

Abstract:
High-capacity coherent optical communication requires narrow linewidth widely tunable laser devices as reference lasers. InP-based quantum dot (QD) material developed for 1.55 µm enables tailoring of device properties, like gain, bandwidth and low linewidth enhancement factor (α-factor) that are favorable for such an application. Theoretical considerations taking into account the quasi zero-dimensional nature of the active zone, clearly predict a strong reduction of the laser linewidth by appropriate tailoring of the QD material design. A monolithically integrated widely tunable narrow-linewidth light source was realized on such material. It comprises four DFB lasers with on-chip micro-heaters, a 3 dB-coupler network and a semiconductor optical amplifier (SOA), covers the entire C+ telecom band and exhibits a linewidth down to 130 kHz independent of the SOA operation current.