2D TCAD Simulations of Single Event Transients in 250 nm Bulk CMOS Technology

Conference: Zuverlässigkeit und Entwurf - 9. ITG/GMM/GI-Fachtagung
09/18/2017 - 09/20/2017 at Cottbus, Deutschland

Proceedings: ITG-Fb. 274: Zuverlässigkeit und Entwurf

Pages: 7Language: englishTyp: PDF

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Authors:
Andjelkovic, Marko; Jagdhold, Ulrich; Krstic, Milos; Kraemer, Rolf (IHP, Im Technologiepark 25, Frankfurt (Oder), Germany)

Abstract:
In this paper, the single event transient (SET) effects in an inverter designed in 250 nm bulk CMOS technology have been investigated with the 2D TCAD simulations using Synopsys Sentaurus tool. The dependence of the SET voltage pulse at the output of inverter on the particle’s LET, strike location, angle of incidence, supply voltage and temperature was analysed. Such analysis is essential for understanding the physical aspects of particle-induced charge deposition and collection processes, and thus also for the development of accurate circuit-level SET characterization methods. Results have shown that the investigated factors have significant influence on the SET response and hence their mutual contribution should be carefully considered during the SET robustness evaluation. Obtained results could be useful for improving the models for the circuit-level SET characterization.