Study on the mechanisms of Si fine polishing with water-soluble polymer
Conference: ICPT 2017 - International Conference on Planarization/CMP Technology
10/11/2017 - 10/13/2017 at Leuven, Belgium
Proceedings: ICPT 2017
Pages: 3Language: englishTyp: PDF
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Authors:
He, Yangang (Hebei University of Technology, Tianjin, 300130, China)
Abstract:
Abstract: The effect of water-soluble polymer in alkaline slurry on the surface of fine polished silicon wafer was investigated. With the concentration of polymer A is 0.15wt%, and polymer B is 0.05wt%. Polymer A is a kind of water-soluble cellulose, and polymer B is a kind of polyoxymethylene ether. As a result, haze and micro-defects number can be reduced to 0.01 and 12 with 12 inch silicon wafer. Polymer A coating film can greatly reduce the friction resistance of abrasive particles on the surface of the silicon substrate, in order to reduce Haze and micro-defect, and polymer B coating outside the particle, forming “soft abrasive”, which can reduce Haze and micro-defect in the process of CMP. Keywords: Si, Fine Polishing, Water-Soluble Polymer, Haze, Mechanism