Application of Slurry Injection System (SIS) to Advanced Deep-Trench (DT) CMP
Conference: ICPT 2017 - International Conference on Planarization/CMP Technology
10/11/2017 - 10/13/2017 at Leuven, Belgium
Proceedings: ICPT 2017
Pages: 6Language: englishTyp: PDF
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Authors:
Jha, Amarnath; Tseng, Wei-Tsu; Wu, Changhong; Yang, Ji Chul (GLOBALFOUNDRIES, Advanced Module Engineering, Malta, NY, USA)
Stoll, Derek (GLOBALFOUNDRIES, Fab10. East Fishkill, NY, USA)
Philipossian, Ara (Araca Inc., Tucson, AZ, USA)
Abstract:
A slurry injection system (SIS) from Araca Inc. is installed on a single-platen, singlecarrier, 300 mm polisher and evaluated for 14 nm deep-trench (DT) CMP process. A 40 % reduction in slurry flow rate with equivalent removal rates and improved withinwafer oxide uniformity are demonstrated. A 400-wafer marathon run with SIS at 40 % reduced slurry flow rate shows stable rates without degradation in within-wafer uniformity and defectivity. Keywords: Deep-trench isolation, Chemical-mechanical Planarization, Slurry Injection System, slurry application, cost reduction.