The Behaviours of BTA and SDS in the Alkaline Slurry during the Backside CMP of Heterogeneous Microstructure of TSV Wafers

Abstract:
Through Silicon Via (TSV) Technology is the core technology of three-dimensional integrated, which is widely used in the integrated industry, and Chemical Mechanical Planarization (CMP) is an essential process in the TSV manufacturing. In this paper, CMP experiments were done to study the mechanism of BTA in the alkaline slurry to the TSV backside heterogeneous structure and the effect of SDS in the BTA contained slurry. Atomic Force Microscope (AFM) Measurement was used to evaluate the polished surface topography, and AFM scratch experiments were done to evaluate the removal mechanism of Cu. The results illustrate that 15mM BTA and 0.5mM SDS were the appropriate content in the alkaline slurry for backside CMP process and the results can have guiding significance to the research of TSV backside CMP process. Key Words: TSV; CMP; Heterogeneous Microstructure; BTA; SDS; AFM;