Carbon Compound Particle Residue Defect Remove by CMP Post Clean
Conference: ICPT 2017 - International Conference on Planarization/CMP Technology
10/11/2017 - 10/13/2017 at Leuven, Belgium
Proceedings: ICPT 2017
Pages: 4Language: englishTyp: PDF
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Authors:
Chen, Shih-Hsi; Yen, Shih-Ci; Chen, Ming-Hsiang; Chen, Ming-Hong; Liu, Chiao-Wei (Process Technology Development Division, Powerchip Technology Corporation. No.12, Li-Hsin Rd. 1, Hsinchu, Science Park, Hsinchu, Taiwan, R.O.C.)
Abstract:
As integrated circuit devices continue shrink to 0.13 um and beyond, conventional aluminum (Al) interconnect had been replaced by tungsten (W) to product metal plug or interconnect which is widely used in metal contact. At the same time, the requirement of metallization become much more stringent such as high degree of planarity, low defectively level, and high device yield. Tungsten chemical mechanical planarization (CMP) appears as a very important role for new generation of ULSI devices. In this paper, we made efforts in minimize the carbon compound particle residue by post clean to enhance the strict demand of the manufacture process. Keywords: Tungsten, CMP, carbon compound particle, defect, cleaner