C-V Characterization Technique for Four-Terminal GaN-on-Si HEMTs Based on 3-Port S-Parameter Measurements

Conference: CIPS 2018 - 10th International Conference on Integrated Power Electronics Systems
03/20/2018 - 03/22/2018 at Stuttgart, Deutschland

Proceedings: ETG-Fb. 156: CIPS 2018

Pages: 5Language: englishTyp: PDF

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Authors:
Salcinesa, Cristino; Spudic, Boris; Kallfass, Ingmar (Institute of Robust Power Semiconductor Systems (ILH), University of Stuttgart, Stuttgart, Germany)
Moench, Stefan (Fraunhofer Institute for Applied Solid State Physics (IAF), Freiburg, Germany)

Abstract:
This paper presents a low complexity measurement technique to characterize state-of-the-art GaN-on-Si HEMTs based on 3-port S-parameter measurements. The proposed measurement technique permits the C-V characterization of the six inter-electrode capacitances (CGS, CGD, CDS, CBS, CBG, CBD) inherent in a 4-terminal GaN-on-Si HEMT up to ±1 kV using a single low-budget test fixture. A-state-of-the-art GaN-on-Si power HEMT available in the market is used as DUT to validate the proposed measurement technique. Measurements show a good agreement with datasheet values and transistor model simulations.