Vibrational resistance investigation of an IGBT gate driver utilizing Frequency Response Analysis (FRA) and Highly Accelerated Life Test (HALT)

Conference: CIPS 2018 - 10th International Conference on Integrated Power Electronics Systems
03/20/2018 - 03/22/2018 at Stuttgart, Deutschland

Proceedings: ETG-Fb. 156: CIPS 2018

Pages: 6Language: englishTyp: PDF

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Schriefer, Thomas (Chair of Electron Devices, University of Erlangen-Nuremberg, Erlangen, Germany)
Hofmann, Maximilian (Fraunhofer Institute for Integrated Systems and Device Technology IISB, Erlangen, Germany)
Maerz, Martin (Chair of Energy Electronics, University of Erlangen-Nuremberg, Nuremberg, Germany)

This work presents a methodology to determine the vibrational resistance of electrical components in power electronic systems. The procedure is exemplified by an IGBT gate driver that is mechano-dynamically characterized applying Laser- Doppler-Vibrometry. The experimental reference is used to validate a finite element model for predicting frequency response functions. Knowing the stress configuration of the gate driver for different automotive design spaces, statistical measures are applied to assess high cycle fatigue. Based on the thesis of linear damage calculation, critical devices are identified and time to failures calculated. As predicted lifetimes significantly exceed reasonable laboratory times, a modified HALT test is introduced that validates the lifetime model.