Identifying the Stray Elements of the Experimental Setup Used in the Semiconductor Datasheets

Conference: CIPS 2018 - 10th International Conference on Integrated Power Electronics Systems
03/20/2018 - 03/22/2018 at Stuttgart, Deutschland

Proceedings: ETG-Fb. 156: CIPS 2018

Pages: 6Language: englishTyp: PDF

Personal VDE Members are entitled to a 10% discount on this title

Delhommais, Mylene; Schanen, Jean-Luc; Wurtz, Frederic; Avenas, Yvan (Univ. Grenoble Alpes, CNRS, G-INP (Inst. of Eng. Univ Grenoble Alps) G2Elab, 38000 Grenoble, France)
Rigaud, Cecile; Chardon, Sylvain (TRONICO-ALCEN, 38000 Grenoble, France)

This paper illustrates how to identify the circuit parameters of the experimental test bench used in the semiconductor datasheets to obtain the dynamic parameters as the switching energies. The method uses an optimization algorithm and a conventional MOSFET/Diode model. With these parameters, it is then possible to evaluate the performances of the device in other operating conditions as the ones proposed in the datasheet under the hypothesis that the test bench stays the same.