TSV-based Passive Networks for Monolithic Integration in SmartPower ICs for Automotive Applications

Abstract:
This work describes how passive networks, in particular lateral condensers and diodes, can be jointly produced by using the process steps necessary for the (Through Silicon Via) TSV technology, by a technologically optimized process control. To produce a high surface capacity, the silicon surface is structured simultaneously with the TSVs with holes. The targeted counter-doping of the areas in which the capacitors are located, the components can be electrically separated from each other and simultaneously realized diodes. Area capacities of 6.1 nF/mm2 were realized for an operating voltage of 50 V. The size of the capacitors, with values from 9 nF to 90 nF, was defined analogously to an E12 series. SiO2 and Si3N4 were used as the dielectric. With an optimized layout, the series resistance of the capacitors is between 0.02 and 0.1 Ω. The maximum blocking voltage of the produced diodes is 120 V.