Integration of graphene in CMOS compatible device environments
Conference: MikroSystemTechnik 2019 - Kongress
10/28/2019 - 10/30/2019 at Berlin, Deutschland
Proceedings: MikroSystemTechnik Kongress 2019
Pages: 3Language: englishTyp: PDF
Personal VDE Members are entitled to a 10% discount on this title
Authors:
Wittmann, Sebastian (Infineon Technologies AG, Wernerwerkstr. 2, 93049 Regensburg, Germany & RWTH Aachen, Otto-Blumenthal-Str. 2, 52074 Aachen, Germany)
Lemme, Max Christian (RWTH Aachen, Otto-Blumenthal-Str. 2, 52074 Aachen, Germany & AMO GmbH, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany)
Abstract:
In this work, the influences of CMOS compatible substrates, metallization layers and encapsulation layers on the electrical quality of graphene were investigated. For this purpose, layer resistivity measurements and charge carrier mobility measurements were performed on different substrates to determine their influence and also how a surface modification of the substrates influences the electrical behavior of graphene devices. Graphene/metal transitions were also characterized electrically and chemically, as well as the electrical quality of isolator layers on graphene.