Wide-Bandgap Semiconductor Power Electronics: Overcoming Barriers in Materials to Circuits for a more Electrified Future
Conference: CIPS 2020 - 11th International Conference on Integrated Power Electronics Systems
03/24/2020 - 03/26/2020 at Berlin, Deutschland
Proceedings: ETG-Fb. 161: CIPS 2020
Pages: 7Language: englishTyp: PDF
Kizilyalli, Isik C.; Cunningham, Daniel W. (Advanced Research Project Agency, U.S. Department of Energy, Washington D.C, USA)
Carlson, Eric P. (Booz Allen Hamilton, Washington D.C, USA)
Wide-bandgap (WBG) power semiconductor devices offer enormous energy efficiency gains in a wide range of potential applications. As silicon semiconductors are fast approaching their performance limits for high power requirements, WBG semiconductors such as gallium nitride and silicon carbide with their superior electrical properties are likely candidates to replace silicon in the near future. Along with higher blocking voltages, WBG semiconductors offer breakthrough relative circuit performance enabling low losses, high switching frequencies, and high temperature operation. However, even with the considerable materials advantages, a number of challenges are preventing widespread adoption of power electronics using WBG semiconductors. The U.S. Department of Energy’s Advanced Research Project Agency for Energy (ARPA-E), has launched several programs to fund transformational innovations in WBG semiconductor technology in order to overcome the barriers to adoption in power electronics. From materials and devices to modules and circuits to application-ready systems integration, ARPA-E projects have demonstrated the potential of WBG semiconductors in high-efficiency power electronics to enable broad adoption in energy applications.