A 600V GaN-on-Si Power IC with Integrated Gate Driver, Freewheeling Diode, Temperature and Current Sensors and Auxiliary Devices
Conference: CIPS 2020 - 11th International Conference on Integrated Power Electronics Systems
03/24/2020 - 03/26/2020 at Berlin, Deutschland
Proceedings: ETG-Fb. 161: CIPS 2020
Pages: 6Language: englishTyp: PDF
Authors:
Moench, Stefan; Reiner, Richard; Waltereit, Patrick; Meder, Dirk; Quay, Ruediger; Ambacher, Oliver (Fraunhofer Institute for Applied Solid State Physics IAF, Tullastr. 72, 79108 Freiburg, Germany)
Hueckelheim, Jan; Kallfass, Ingmar (Institute of Robust Power Semiconductor Systems ILH, University of Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany)
Abstract:
A lateral GaN-on-Si power IC is presented, which realizes the core functionality for power converters on-chip. Monolithic integration enhances the functionality of a 600 V, 85mW power transistor by an intrinsic freewheeling diode, gate-driver, current shunt and an isolated temperature sensor. An integrated auxiliary transistor and a diode realize a single-input pre-driver, a current-mirror sensor or a voltage clamp for on-resistance measurement. Gate driver losses were measured up to 70 MHz. A 350V hard-switching half-bridge shows 98.8% efficiency at 600W and 65 kHz. Continuous 40MHz resonant-switching at 200V and 6A triangular peak current was achieved, operating the half-bridge at 50% duty-cycle with a 75 nH air-core inductor. The work demonstrates significant functionality enhancement of large-area GaN power transistors by monolithic integration of additional circuitry at low additional cost and chip area.