SiC Power Module with integrated RC-Snubber Design for Voltage Overshoot and Power Loss Reduction
Conference: CIPS 2020 - 11th International Conference on Integrated Power Electronics Systems
03/24/2020 - 03/26/2020 at Berlin, Deutschland
Proceedings: ETG-Fb. 161: CIPS 2020
Pages: 6Language: englishTyp: PDF
Rettner, Cornelius; Schiedermeier, Maximilian; Apelsmeier, Andreas (Chair of Power Electronics, Friedrich-Alexander University Erlangen-Nuremberg, Nuremberg, Germany)
Heckel, Thomas; Diepgen, Antonia; Klische, Alexander; Dirksen, Daniel; Maerz, Martin (Chair of Power Electronics, Friedrich-Alexander University Erlangen-Nuremberg, Nuremberg, Germany & Fraunhofer Institute for Integrated Systems and Device Technology IISB, Erlangen, Germany)
The maximum voltage overshoot of SiC MOSFETs in power modules limits the switching speed of voltage source inverters in electric vehicles. As the efficiency increases with faster switching transitions, decreased commutation loop inductances allow higher switching speeds at same voltage overshoot level and extend the vehicle’s range. In this research, a SiC power module including an integrated RC-snubber is designed to increase the switching speed at same voltage overshoot. The RC-snubber acts as a damped low inductance commutation loop filtering the switching transients and suppressing the ringing, whereas the low frequency components are filtered by the dc-link capacitor. To meet the target of increased system efficiency, the losses of all inverter components are analyzed for space-vector modulation (SVPWM).