Design of Interleaved GaN Transistor Based Buck Converter with Directly Coupled Foil Winding Inductor
Conference: CIPS 2020 - 11th International Conference on Integrated Power Electronics Systems
03/24/2020 - 03/26/2020 at Berlin, Deutschland
Proceedings: ETG-Fb. 161: CIPS 2020
Pages: 6Language: englishTyp: PDF
Kroics, Kaspars (Riga Technical University, Riga, Latvia)
In this paper is discussed design of foil based directly coupled inductor for two phase high switching frequency DC-DC converter with GaN transistors. The interleaving topology applied to the converter allows to reduce output current ripple therefore per-phase current ripple can be increased as low on-state resistances and low switching losses of GaN transistors eliminate significant increase of losses. The integrated magnetic structure is used to achieve higher power density. PSIM software and FEMM simulation software based results are given and experimental tests are provided.