Low-inductive SiC H-Bridge for Direct-Inverter-Single-Tooth-Integration (German BMBF Public Funded Research Project ‘VERSE‘)
Conference: CIPS 2020 - 11th International Conference on Integrated Power Electronics Systems
03/24/2020 - 03/26/2020 at Berlin, Deutschland
Proceedings: ETG-Fb. 161: CIPS 2020
Pages: 5Language: englishTyp: PDF
Reber, Gerhard; Rittner, Martin; Guyenot, Michael; Kessler, Ulrich; Klemm, Alexander; Holz, Rainer; Reinold, Manfred (Robert Bosch GmbH, Renningen, Germany)
Mechatronic integration of drive inverter power electronics into the electric motor is one of the most important future trends in general, and very special for future automotive business. One extremely highly integrated solution was explored and shown-up during the years 2013-2016 by the project partners of the German BMBF public funded research project ‘EMiLE’ – ‘Electro Motor integrated Power Electronics. Therein, a Silicon-IGBT-based H-bridge was designed and examined for an inverter power stage directly contacted to the two AC-connections of a single tooth configuration as the stator part of a later PSM overall drive system. Due to its potential for higher efficiencies and higher power densities in power electronics systems, the wide-band-gap SiC-MOSFET power semiconductor is the much more preferable device for mechatronic integrated power electronics applications. Now coming from the origin ideas and objectives of the ‘EMiLE’ research project, the currently running German BMBFpublic funded project ‘VERSE’ – Fully Integrated Autonomous Single Tooth Module with Integrated SiC Power Electronics for Electric Drives – explores a new unique SiC-MOSFET-basing H-bridge and power stage solution for the later contacting to the single tooth AC-connections.