Gallium Nitride in Automotive High-Speed Drive Applications

Conference: CIPS 2020 - 11th International Conference on Integrated Power Electronics Systems
03/24/2020 - 03/26/2020 at Berlin, Deutschland

Proceedings: ETG-Fb. 161: CIPS 2020

Pages: 8Language: englishTyp: PDF

Antensteiner, Benjamin; Lamplmayr, Patrick; Moerwald, Michael; Haeusler, Lukas (Magna Powertrain ECS, Steyrer Str. 32, 4300 St. Valentin, Austria)
Reisinger, Martin (Linz Center of Mechatronics GmbH, Altenberger Str. 69, 4040 Linz, Austria)
Gruber, Wolfgang (Johannes Kepler University Linz, Institute of Electrical Drives and Power Electronics, Altenberger Str. 69, 4040 Linz, Austria)

The present paper deals with the characterization and evaluation of Gallium Nitride transistors for low voltage automotive powertrain applications. Two different package versions for Gallium Nitride transistors, a design with discrete package and one utilizing direct embedding of the semiconductors into the PCB, are investigated in detail. The switching behavior of the Gallium Nitride transistors and overall system losses when driving a three-phase synchronous motor are determined and compared for both design versions.