Power Cycling of SiC-MOSFET Single-Chip Modules with Additional Measurement Cycles for Life End Determination

Conference: CIPS 2020 - 11th International Conference on Integrated Power Electronics Systems
03/24/2020 - 03/26/2020 at Berlin, Deutschland

Proceedings: ETG-Fb. 161: CIPS 2020

Pages: 6Language: englishTyp: PDF

Wagner, Felix; Reber, Gerhard; Rittner, Martin; Guyenot, Michael (Robert Bosch GmbH, Research and Advance Engineering, Renningen, Germany)
Nitzsche, Maximilian (University of Stuttgart, Institute for Power Electronics and Electrical Drives, Stuttgart, Germany)
Wunderle, Bernhard (TU Chemnitz, Institute for Materials and Reliability of Microtechnology Systems, Chemnitz, Germany)

To meet the trend of the increasing market of SiC-based power electronics, ECPE is under refinement of the AQG324, to adapt reliability and lifetime testing of power modules with Power Cycling Testing (PCT) also for SiC-based power modules. Based on this qualification guideline the end of life (EoL) criteria of the forward voltage drop VDS is discussed with power cycling (PC) results of SiC-MOSFET single-chip modules and it is shown that different lifetime results can be obtained, if VDS is measured accordingly to different measurement and thermal conditions of VDS. Therefore, PC with a main cycle and additional measurement cycles is introduced to measure VDS and the thermal resistance Rth independently from PC and with simple measurement equipment. Using this procedure, three SiC-MOSFET single chip vehicles with different top-side contacts in fact Al-wire, Al-ribbon and AlCu ribbon bonds are compared using a ‘scientific PC’ and measurement cycles to retain EoL criteria.