Noise Performance in Current Mirror Circuit based on CNTFET and MOSFET
Conference: SMACD / PRIME 2021 - International Conference on SMACD and 16th Conference on PRIME
07/19/2021 - 07/22/2021 at online
Proceedings: SMACD / PRIME 2021
Pages: 4Language: englishTyp: PDF
Authors:
Marani, Roberto (National Research Council of Italy (CNR), Institute of Intelligent, Industrial Technologies and Systems for Advanced, Manufacturing (STIIMA), Bari, Italy)
Perri, Anna Gina (Department of Electrical and Information Engineering, Electronic Devices Laboratory, Polytechnic University of Bari, Bari, Italy)
Abstract:
In this paper we present a comparative analysis of noise performance of Carbon Nanotube Field Effect Transistors (CNTFETs) and MOSFET, through the design of a basic current mirror. For reference current of 1 muA and 10 muA the output static and dynamic characteristics are better in the case of CNTFET, but for all cases the output noise current is always higher for the CNTFET than for the MOS. The software used is Advanced Design System (ADS) which is compatible with the Verilog A programming language.