Reliability Investigation of 0.18mum CMOS for Oilfield Applications
Conference: SMACD / PRIME 2021 - International Conference on SMACD and 16th Conference on PRIME
07/19/2021 - 07/22/2021 at online
Proceedings: SMACD / PRIME 2021
Pages: 4Language: englishTyp: PDF
Authors:
Tran, Yen (Etudes et Production Schlumberger Clamart, France & Univ. Bordeaux, Bordeaux INP, UMR, CNRS 5218, IMS Laboratory, Talence, France)
Nomura, Toshihiro; Cherchali, Mohamed Salim; Tassin, Claire (Etudes et Production Schlumberger, Clamart, France)
Deval, Yann; Maneux, Cristell (Univ. Bordeaux, Bordeaux INP, UMR CNRS 5218, IMS Laboratory, Talence, France)
Abstract:
We investigated the degradation due to bias temperature instability (BTI) and hot carrier injection (HCI) for 0.18micrometer CMOS (Complementary Metal-Oxide- Semiconductor) under extreme temperature operations (150 °C and 210 °C). The transistors have been applied dedicated DC bias and temperature conditions to investigate each intrinsic wear-out mechanism in specific severe environment for oilfield applications. The aging tests have been monitored for up to 1,000 hours. These results are preliminarily used to develop equations reflecting aging laws to be included in commercial software tool for further investigation at logic circuit level.