A Cryogenic High-Voltage Amplifier for Ion Traps

Conference: SMACD / PRIME 2021 - International Conference on SMACD and 16th Conference on PRIME
07/19/2021 - 07/22/2021 at online

Proceedings: SMACD / PRIME 2021

Pages: 4Language: englishTyp: PDF

Authors:
Sieberer, Michael; Sandner, Christoph (Infineon Technologies Austria AG, Villach, Austria)
Hadley, Peter (Institute of Solid State Physics, Graz University, Graz, Austria)

Abstract:
Ion traps for quantum computers need high voltages to confine ions in an electrostatic potential. This work presents a high voltage current-feedback instrumentation amplifier, implemented in 130 nm-CMOS, that is fully functional at temperatures below 20 K and dissipates only 1.5 mW when powered with +-12 V. Since drain-extended MOS transistors cannot be used at cryogenic temperatures, high-voltage compliance is achieved by stacking low-voltage transistors. The high-frequency noise is below 8nV / root Hz to avoid ion heating. Flicker noise and offset is reduced by chopping of the input gain stages.