Mask absorber material dependence of 2D OPC in 193nm high NA lithography

Conference: EMLC 2006 - 22nd European Mask and Lithography Conference
01/23/2006 - 01/26/2006 at Dresden, Germany

Proceedings: EMLC 2006

Pages: 2Language: englishTyp: PDF

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Cheng, Wen-Hao; Farnsworth, Jeff (Intel Corporation, 2200 Mission College Blvd., Santa Clara, California 95054 USA)

Rigorous optical polarization and proximity correction (OPC) for reticle induced polarization effects are critical to the success of 193nm wavelength immersion lithography implementation. The impact of 2D and 3D mask polarization effects to imaging in ultra high-NA low-k1 imaging is assessed by simulation. An end-to-end (ETE) dense line feature of attenuated phase shift mask (attPSM) with various material of film stack is studied.