Compact Multi-Stress Sensitive Field Effect Transistor with Eight Source/Drain Contacts
Conference: Mikrosystemtechnik Kongress 2005 - Mikrosystemtechnik Kongress 2005
10/10/2005 - 10/12/2005 at Munich, Germany
Proceedings: Mikrosystemtechnik Kongress 2005
Pages: 4Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Doelle, M.; Bartholomeyczik, J.; Ruther, P.; Paul, O. (IMTEK – Microsystem Materials Laboratory, University of Freiburg, 79110 Freiburg, Germany)
This paper reports on the merger of two field effect transistor based stress sensors with four source/drain contacts into a compact octagonal device which enables one to extract the two in-plane stress tensor components (sigmaxx –sigmayy) and sigmaxy simultaneously. The active area of the resulting structure is only 13 x 13 micrometer2 which makes it the smallest stress sensor for the extraction of both in-plane components to date. Undesired thermoelectric and magnetic contributions to the output signal are eliminated by applying the discrete spinning current method. As a field effect device, the sensor benefits of the advantage of an independent on/off signal, namely the gate voltage. This makes it possible to avoid the implementation of area-consuming transmission gates in integrated sensor arrays.